Abstract
A GaAs/AlGaAs power HBT was fabricated on a silicon substrate, where the thermal conductance is reduced by a factor of 2.8 compared with that on bulk GaAs. Owing to the newly developed monolithically grown ballast resistor over an emitter region, the experimentally fabricated device has shown the highest collector current of over 2.5 A for a device with an active device area of 0.14 mm2.
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