Abstract
Taper-coupled laser structures suitable for integrated optics applications were grown by a liquid phase epitaxy process. Reduced threshold current densities, j0=6.3 kA/cm2 μm, and external differential quantum efficiencies ηd as high as 28% were measured with nominally undoped n-type active layers. Control units yielded j0=5.3 kA/cm2 μm with ηd as high as 37%. An internal quantum efficiency of 78% and a taper coupling efficiency ≳50% are deduced from the data.
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