Abstract
Atomic layer epitaxy (ALE) of AlAs is realized by supplying partially decomposed trimethylaluminium to a substrate. GaAs/AlGaAs quantum wells and GaAs/AlAs resonant tunneling structures are prepared by ALE. Photoluminescence spectra show the narrowest spectral width ever obtained by ALE, showing the small thickness variation. Negative resistance is observed in a resonant tunneling diode.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
