Abstract
A GaAs/AlAs multilayer cavity with a λ/2 AlAs cavity layer, which includes Er-doped InAs quantum dots (QDs) embedded in a thin strain-relaxed In0.45Ga0.55As barrier, was fabricated. Structural and optical properties were characterized by scanning electron microscopy and optical reflection measurements, respectively. We found that the cavity quality of the Er-doped QD cavity was improved by reducing the thickness of the strain-relaxed In0.45Ga0.55As barriers in the λ/2 AlAs cavity layer. Furthermore, time-resolved optical measurements were performed to study the relaxation time of the photogenerated carriers in the Er-doped QD cavity. A full width at half maximum of a 1 ps with a large reduction of slowly decaying carriers was obtained for the Er-doped QD cavity with a thin strain-relaxed In0.45Ga0.55As barrier.
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