Abstract
By proper surface treatment, p-doped GaAs can be converted into a photoemitter of extremely high quantum efficiency Y. Scheer and van Laar obtained Y ≥ 0.1 electron per incident photon above threshold.1) In this paper we show that when using circularly polarized light of suitable frequency instead of unpolarized light, the electrons emitted from GaAs are spin polarized up to 50 %.2) Due to the simplicity of the device, GaAs may find wide application as a source of polarized electrons.
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