Year-end Sale % OFF 
Abstract
Room temperature bonding of Ga2O3/Si, Al2O3/Si and SiO2/Si using in-situ deposition of Si films on the oxide materials was investigated. The in-situ deposition process can be performed by standard bonding apparatus for the surface activated bonding using Ar fast atom beam without modification. All of oxide materials were successfully bonded to Si wafers. Minimum thickness of the deposited Si film for successful bonding depends on the oxide materials. SiO2 requires thicker deposited film than the other oxides.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
