Abstract
A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x 1016 cm-3) on heavily-doped (3.6 x 1018 cm-3) substrates, exhibited forward current density of 100A.cm-2 at 2.1 V, with absolute current of 1 A at this voltage and a reverse breakdown voltage (VB) of 650V. The on-resistance (RON) was 1.58 x 10-2 Ω.cm2, producing a figure of merit (VB2/RON) of 26.5 MW.cm-2. The Schottky barrier height of the Ni was 1.04 eV, with an ideality factor of 1.02. The on/off ratio was in the range 3.3 x 106 - 5.7 x 109 for reverse biases between 5 and 100V. The reverse recovery time was ∼30 ns for switching from +2V to -5V. The results show the capability of β-Ga2O3 rectifiers to achieve exceptional performance in both forward and reverse bias conditions.
Highlights
There is significant interest in power electronics based on β-Ga2O3 because it has a larger potential figure-of-merit than GaN and SiC for some of the applications needed for low frequency, high voltage power switching.[1,2,3,4,5]
The operation of power wide bandgap semiconductor devices is constrained by this critical electric field for breakdown.[6]
We show that edge terminated Schottky rectifiers on low-doped epitaxial layers of β-Ga2O3 on bulk conducting substrates can achieve forward currents of 1 A at 2.1 V and reverse breakdown voltages of 650 V for relatively large (0.01 cm2) devices
Summary
There is significant interest in power electronics based on β-Ga2O3 because it has a larger potential figure-of-merit than GaN and SiC for some of the applications needed for low frequency, high voltage power switching.[1,2,3,4,5] These applications generally require a high electric field breakdown strength, low on-state resistance (Ron) and low charge storage times. Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit Recent reviews on advances in device technologies have detailed the reasons for the interest in Ga2O3, revolving around its large bandgap (∼4.8 eV), wide range of controlled n-type doping concentrations during bulk or epitaxial growth and availability of high quality, large diameter substrates.[1,2,3,4,5]
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