Ga2O3 fin field-effect transistors with on-axis (100)-plane gate sidewalls fabricated on Ga2O3 (010) substrates

Abstract

Ga2O3 fin field-effect transistors (FinFETs) were fabricated on β-Ga2O3 (010) substrates, which had on-axis (100)-plane gate sidewalls treated by nitrogen radical irradiation. The typical FinFET with a fin width (W fin) of 400 nm demonstrated decent on-state device characteristics such as a low specific on-resistance of 6.9 mΩcm2, a high drain current on/off ratio of over 109, and a subthreshold slope of 82 mV/decade. The threshold voltage (V th) of the FinFETs increased with decreasing W fin, and enhancement-mode operation with V th > 0 V was achieved for W fin < 800 nm.