Abstract
The effect of oxygen plasma on gallium oxide films formed by electrochemical oxidation of n-GaAs wafers with a donor concentration Nd = (1–2) × 1016 cm−3 has been investigated. It is shown that the treatment in an oxygen plasma at a temperature of 50–90°C increases the concentration of β-phase crystallites, which causes an increase in the permittivity, a decrease in the dielectric dissipation factor, and a change in the conductivity of GaAs-〈gallium oxide〉-metal structures.
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