Ga0.47In0.53As vertical photoconductive detectors with high gain and low bias voltage

Abstract

We demonstrate for the first time a long-wavelength Ga 0.47 In 0.53 As vertical photoconductive detector with very high gain, low noise, low-bias voltages, high sensitivity, and high-coupling efficiency. The detector consists of an n + InP, a Fe-doped Ga 0.47 In 0.53 As, and an n + Ga 0.47 In 0.53 As layer grown successively on a semi-insulating InP substrate. The highly resistive active layer sandwiched between two n + layers creates a uniform electric field perpendicular to the surface, producing a dc gain of 86 at bias voltages as low as 0.5 V. The noise power at 100 MHz is about 11 dB lower than that of a coplanar interdigitated photoconductive detector prepared with undoped GaInAs grown by vapor-phase epitaxy. Preliminary measurements reveal a receiver sensitivity of -28.2 dBm at a bit-error rate of 10-9at 420 Mbit/s and a wavelength of 1.55 µm.