Abstract
Using methods of physicochemical analysis: differential thermal analysis (DTA), X-ray phase analysis (XPA), microstructural analysis (MSA), as well as determination of microhardness and density, the chemical interaction in the Ga-SrSe system was studied and a T-x phase diagram was constructed. It has been established that the Ga-SrSe system is quasi-binary and degenerate of the eutectic type. It has been established that at room temperature in the system Ga-SrSe a solid solution based on SrSe up to 5 mol % Ga. One of the methods for physicochemical analysis of semiconductor compounds is to determine their microhardness depending on the composition. In the Ga-SrSe system, two different microhardness values are defined. One of them is the microhardness of SrSe (1240-1250) MPa, the value of which corresponds to the microhardness of an α-solid solution based on the SrSe compound, and the microhardness value (700- 730) MPa corresponds to the microhardness of gallium.. The densities obtained in the system increase monotonically depending on the composition.
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