Abstract
Codoping of gallium (Ga) and boron (B) in a Czochralski-silicon (CZ-Si) crystal has been proposed to be an effective way to improve the homogeneity of resistivity over the length of a simply Ga-doped Si crystal, by increasing the very small equilibrium segregation coefficient of Ga ( k 0=0.008). It was observed that the axial resistivity variation in a Ga- and B-codoped Si crystal was smaller than that in simply Ga-doped Si crystals. The segregation behavior of Ga and B in the codoped CZ-Si crystal growth has been investigated in the present study. The effective segregation coefficient of Ga was kept almost constant when the B concentrations were low, but it increased at higher B concentrations. On the other hand, the effective segregation coefficient of B was kept almost constant when the B concentrations were low; however, it decreased at higher B concentrations. It has been analytically demonstrated that there is strong interaction between Ga and B in a Si crystal, which leads to an increase in the segregation coefficient of Ga in Si crystal growth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
