Abstract
Ga-rich GaAs (0 0 1) surfaces are successfully observed by scanning tunneling microscopy (STM) during high-temperature annealing in molecular beam epitaxy. With a substrate temperature of 550°C, reflection high-energy diffraction patterns and reflectance anisotropy spectra confirm a (4×2) Ga-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that detaching and attaching of Ga adatoms may be the cause of this surface dynamics. For these conditions it is determined that ζ(4×4), ζ2(4×4) and ζ(4×6) reconstructions co-exist on the surface. The ζ2(4×4) reconstruction contains a Ga tetramer cluster.
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