Abstract
We present flexible Cu(In,Ga)Se2 (CIGSe) solar cells on stainless steel substrates with enhanced photovoltaic performance. CIGSe absorbers with thicknesses of 1.4 and 1.0 µm were deposited by the multilayer precursor method using precursor depositions of Ga–Se/In–Se/Cu–Se and then annealed under In–Se/Ga–Se/In–Se evaporations. The pronounced double-graded [Ga]/([Ga] + [In]) (GGI) profiles of the 1.4-µm-thick and 1.0-µm-thick CIGSe films were obtained using a relatively high Ga flux (up to 5.4 × 10−4 Pa), which shortened the annealing time. The pronounced double-graded GGI profiles of the 1.4-µm-thick and 1.0-µm-thick CIGSe films and CuInSe2 phase separation remarkably enhanced photovoltaic performances because a high back slope in the double-graded GGI profile induces back surface field, and the pronounced double-graded GGI profile with CuInSe2 phase separation yields the minimum GGI values, increasing light absorptionat longer wavelengths and in turn, conversion efficiency (η). Ultimately, η values of the flexible CIGSe solar cells increased to 17.3%, 17.2%, and 14.3% for CIGSe films with thicknesses of 2.5, 1.4, and 1.0 µm, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
