Abstract
Vertically well-aligned Ga-doped ZnO nanorods with different Ga content were grown bythermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesizedwith 50 wt% Ga with respect to the Zn content showed minimum compressivestress relative to the ZnO template, which led to a rapid growth rate along thec-axis due to the rapid release of stored strain energy. A further increase in the Ga contentimproved the conductivity of the nanorods due to the substitutional incorporation of Gaatoms in the Zn sites based on a decrease in lattice spacing. A p–n diode structure withGa-doped ZnO nanorods as an n-type layer displayed a distinct white light luminescencefrom the side view of the device, showing weak ultraviolet and various deep-level emissions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.