Abstract
Vertically well-aligned Ga-doped ZnO nanorods with different Ga content were grown bythermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesizedwith 50 wt% Ga with respect to the Zn content showed minimum compressivestress relative to the ZnO template, which led to a rapid growth rate along thec-axis due to the rapid release of stored strain energy. A further increase in the Ga contentimproved the conductivity of the nanorods due to the substitutional incorporation of Gaatoms in the Zn sites based on a decrease in lattice spacing. A p–n diode structure withGa-doped ZnO nanorods as an n-type layer displayed a distinct white light luminescencefrom the side view of the device, showing weak ultraviolet and various deep-level emissions.
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