Ga Asの化学研摩過程

Abstract

For finishing the junctions of GaAs diodes in ultra high frequencies and the substrata of their epitaxially grown layers with damage-free and mirror-like surfaces, the discal chemical polishing process is pursued from the the view-points of surface microstructure, roughness and damaged layer, including the process by dip-polishing. In addition, by growing the epitaxial layers on the surfaces, the surface qualities are compared with each other. The results obtained are as follows : (1) According to dip-polishing, the smoothness of surface is inferior to that by the discal polishing because of the formation of remains in dissolution. (2) By the discal polishing, the roughness is given as fine as 0.010.02 μ in Hmax, which is better in one order than that by dip polishing. (3) Under the estimation on chemically polished surfaces by electron diffraction, Kikuchi lines are exposed on the discally polished surfaces as well as on the surfaces by dipping. (4) The epitaxially grown surface whose substrate is polished by the method described here exhibits the better smoothness than that by dipping.