Abstract
Changes of composition profiles in GaInAs layers sandwiched by InP, due to the layerthicknesses, were measured by the x-ray CTR scattering and cross-sectional STMtechniques. Both techniques showed quite similar results, which indicates that the x-rayCTR scattering measurements and analyses give us correct composition profiles both forgroup-III and group-V atoms in the buried heterostructures non-destructively. Limits of theCTR analysis are discussed, especially on the spatial resolution and composition gradingbelow the bottom interface.
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