Abstract
An index-guiding structure capable of providing well-controlled single-mode operation has been realized for Ga x In 1-x AS y P 1-y /InP lasers ( x = 0.28, y = 0.62 , and \lambda = 1.3 \mu m) using a terraced substrate (TS) configuration prepared by single-step LPE growth. The threshold current was reduced to as low as 44 mA and single-transverse and longitudinal mode operation was stably achieved up to 2.8 times the threshold. Continuous operation at room temperature was also demonstrated.
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