Abstract
Devices which obey Lampert semiconductor behaviour show g-r noise spectra several orders of magnitude above thermal noise with the characteristic features of a frequency-independent plateau at low frequencies and an ω -2 dependence at high frequencies. The plateau has the predicted I 3 2 dependence on the dc current, and the magnitude is within a factor two of the theories presented. The carrier lifetimes as evaluated from the noise cutoff frequencies and from the pulse behaviour agree within 20%.
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