Abstract
A method is proposed for determining the threshold voltage in a MOSFET, based on the derivative of the <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gm</i> / <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> ratio with respect to the gate voltage, which theoretically originates from the unified charge-control model similar to the capacitance-derivative method. This yields threshold voltages significantly less affected by gate-voltage-dependent mobility and series resistance than linear-extrapolation techniques. Moreover, it is more physically adequate in the case of advanced MOSFETs with ultrathin dielectrics, thin SOI body, or double gate operation, featuring a gradual transition from the exponential to linear charge control. The robustness of the method is experimentally verified on FinFETs with different lengths.
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