Abstract
Among various non-linear Raman techniques coherent anti-Stokes Raman spectroscopy (CARS) has become most popular because of its strong, easily detectable coherent signal. For the spectroscopy of narrow-gap semiconductors which are only transparent for infrared light this advantage is of special importance. Using Maxwell's theory the process can be described by a third-order non-linear susceptibility chi (3). Its strongest Raman-like resonances in a semiconductor exposed to a magnetic field are the spin-flip resonances from which the effective g factors of electrons and holes can be deduced. The interference of resonant and non-resonant contributions to the susceptibility in some cases causes complicated line shapes which have to be analysed carefully to find the correct resonance positions. A short review of the theoretical description of the process and the experimental apparatus suitable for the investigation of narrow-gap semiconductors in a magnetic field is given. Then the analysis of the line shapes is described. Results are discussed for several III-V compounds, II-VI narrow-gap materials and IV-VI epitaxial films.
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