Abstract
It is shown that the effective Lande splitting factor or g-factor of electrons localized on heterostructures such as small quantum dots is always formed as a difference of two values. The first of themrelates to thematerial of the dot itself and critically depends on its sizes and shape; the second one relates to the barriermaterial (surrounding matrix); therewith, the dependence on the latter does not disappear at any dot sizes. The known (k, p) Kane theory defining the renormalization of electron mass and g-factor in bulk semiconductors, is modified for small quantum dots with “incomplete” band structure. Specific calculations of the electron ground state energy and g-factor are performed for the covariant InAs/AlSb heterostructure not localizing holes and, hence, capable of forming pure one-electron states (prototypes of solid-state qubits).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
