Abstract

We report the fabrication of hybrid Si nanowires @ g-C3N4 nanosheets based photocathode using metal assisted chemical etching and facile liquid exfoliated process. The g-C3N4 nanosheets on Si nanowires form hybrid heterojunction photocathode, which exhibits an enhanced photon induced water reduction activity enabling higher photocurrent density of 22 mA cm−2 with applied bias photocurrent conversion efficiency of 4.3% under visible light irradiation. The onset potential of cathodic photocurrent is positively shifted from 41 to 420 mV vs. RHE with the short circuit current density, Jsc of 0.50 mA cm−2 owing to superior charge transport in hybrid photocathode as compared to pristine Si nanowires for hydrogen evolving reaction at pH∼7. The electrochemical impedance spectroscopy measurement elucidates the interface layer of g-C3N4 nanosheets form hybrid heterojunction with Si nanowires that result significant increment in solar water reduction activity owing to low charge transferred resistance with high life time of excited electrons in conduction band. This strategy may open to design a new low cost stable hybrid heterostructure photocathode for solar induced water reduction.

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