Abstract
Abstract This paper describes research on a low-temperature technique for fusing two silicon wafers together. The work has focused on integrating the bonding process with MOS IC processing. A seal that is apparently hermetic is achieved at 450 °C between wafers which have gone through the individual processing steps needed to fabricate MOS capacitors and electrical leads through the sealed package. In order to use this process to bond at low temperature, the bonding surfaces must be smooth, clean, and phosphorus free.
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