Abstract
NbN films were prepared on planar sapphire and on small-diameter cylindrical quartz and sapphire substrates. Films prepared on cylindrical substrates had a greater critical current density than those prepared on planar substrates. The highest current densities of 1*10/sup 7/ A/cm/sup 2/ were achieved on cylindrical sapphire substrates. Measurements of the laser power required to drive the switch into the normal state were made as a function of current being carried by the NbN-clad sapphire rod. These experiments indicated that near J/sub c/ very small amounts of laser energy were needed to drive the sample normal as expected. At current values well below J/sub c/, much larger energies were required. These large energies, which are roughly 10/sup 3/ larger than the condensation energy, were attributed to heating of the sapphire rod necessary to raise the NbN above its transition temperature. The desirable properties of a superconducting switch are the ability to carry large currents in the superconducting state and have a high resistance in the normal state. Considerations for using the high-T/sub c/ oxides in a superconducting switch are examined. >
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