Further improvement in high crystalline quality of homoepitaxial CVD diamond

Abstract

High-quality homoepitaxial diamond (001) films with macroscopically flat surfaces have been successfully grown using a high-power microwave-plasma chemical-vapor-deposition (MWPCVD) method. In this study, further optimization of the homoepitaxial growth condition has been accomplished mainly by controlling off-angles to 5° along the <110> or <100> direction of high-pressure/high-temperature-synthesized Ib diamond (001) substrates. We have found that the homoepitaxial films deposited at reasonably high growth rates under the optimized growth condition including the off-angle of 3°–4° along the <110> direction have macroscopically flat surfaces, accompany very low or almost negligible densities of growth hillocks and yield strong free-exciton emissions in both steady-state cathodoluminescence and time-resolved photoluminescence spectra measured at room temperature. These indicate that apparent lateral growths suitable for high-quality homoepitaxial layers in the case of the high-power MWPCVD method, which are similar to those previously reported in the case of MWPCVD processes with low methane concentrations, rather quickly occur from step edges on (001) terraces and that they can be achieved more preferentially on the vicinal substrates at high temperatures and high methane concentrations.