Fundamental study on the nanocryotron properties by the numerical calculation

Abstract

We investigated the variation in current and temperature in the L-shaped line with the change in the injection current by the numerical calculation method, as the first step to study the electrical properties of the nanostructure devices. Nanostructure devices such as nanocryotron (nTron) are candidates for the interface device in the hybridization of superconducting single-flux-quantum circuits with semiconductor devices such as CMOS memories. However, physics of these nanostructure devices is not clear yet. Thus, we are investigating the behavior of the nanostructure devices by simulation using the time-dependent Ginzburg-Landau equation and the thermal diffusion equation. We have also been fabricating nanostructure devices and investigating their properties. The simulation in this report and its future progress will help to analyze and understand the experimental results, and will also provide device design guidelines.