Abstract
ABSTRACTThe chemical mechanical polishing of copper in several slurry chemistries based on iodate and iodine oxidizers has been investigated. Benzotriazole (BTA) and potassium iodide (KI) were used for preparing the polishing slurry chemistries based iodate. As observed by the anodic electrochemical behavior of copper and the surface analyses of EDS, it was determined that CuI layer formed in the iodate and iodine based solutions. Especially, in I2 slurry in pH 4, CuI layer formed very fast and uniformly, and passivated the copper. In addition, the highest removal rate using this slurry was obtained. These results were compared to H2O2 based slurries. From these experimental results, the slurry containing 0.1M KIO3 and 0.01M KI, and 0.01N I2 give better results than H2O2 based slurry in copper CMP.
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