Abstract
The effects of acid generation efficiency and other properties on the resolution, line width roughness (LWR), and sensitivity (RLS) tradeoff for extreme ultraviolet (EUV) photoresists were evaluated under electron beam (EB) exposure. The acid generators (AGs) introducing a trifluoromethyl group as an electron-withdrawing group on the sulfur atom had a much higher reduction potential than current AGs. We determined acid generation efficiency by the 13C-NMR method and standard titration. The dissolution inhibitory effect on the alkaline developer and the thermal property of the resist film using each AG were also evaluated. The RLS performance of resists containing AGs with a higher acid generation efficiency than conventional AGs was characterized using the relative Z-factor under EB exposure.
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