Abstract
This work reports the growth and characterization of thin films of Cu(In,Ga)Se 2 (CIGS), which were grown by sequential sputtering, electrodeposition, and physical vapor deposition. Photovoltaic cells have been fabricated using these films with CdS heterojunction partners and the performance has been characterized. The effect of annealing conditions (temperature and duration) on the CIGS film microstructure and corresponding device performance has been investigated. Structure-property correlations were made using diffraction studies and Rietveld analysis. SEM studies were carried out to understand the effect of microstructure of the CIGS films on the solar cell efficiency. Cell efficiencies in excess of 10% have been achieved by using optimized annealing conditions. In addition, the optical properties of the sputtered CIGS films were characterized using variable angle spectroscopic ellipsometry and sputtered CIGS films were found to have optimum band gap.
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