Abstract
A review of the compensation mechanisms in II–VI compounds and alloys is presented in the light of the more recent experimental and theoretical works. Compensation due to native defects is first considered and then the effects due to shallow-deep transition of impurity levels are described. Three exemplary situations of doping limitation are finally distinguished with the corresponding prototype systems: compensation by native defects (ZnSe:N), achievement of chemical solubility limit (ZnTe:N), impurity deactivation and compensation related to a shallow-deep transition (ZnTe:Ga, ZnSe:As).
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