Abstract
Quantum transport measurements are reported on the high mobility, low carrier density (25500 cm 2V −1s −1 and 1.8 × 10 11 cm −2), two-dimensional electron gas in InSbCdTe heterojunctions, realised as a result of improvements in growth techniques. Measurements of the quantum Hall effect, low-field magnetoresistance and electron g-factor all point to the importance of a large zero-magnetic-field spin-splitting of the subband. which is estimated to be ∼ 10 meV.
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