Fundamental Mechanisms of Interface Roughness

Abstract

Publication quality results were obtained for several experiments and materials systems including: (i) Patterning and smoothening of sapphire surfaces by energetic Ar+ ions. Grazing Incidence Small Angle X-ray Scattering (GISAXS) experiments were performed in the system at the National Synchrotron Light Source (NSLS) X21 beamline. Ar+ ions in the energy range from 300 eV to 1000 eV were used to produce ripples on the surfaces of single-crystal sapphire. It was found that the ripple wavelength varies strongly with the angle of incidence of the ions, which increase significantly as the angle from normal is varied from 55° to 35°. A smooth region was found for ion incidence less than 35° away from normal incidence. In this region a strong smoothening mechanism with strength proportional to the second derivative of the height of the surface was found to be responsible for the effect. The discovery of this phase transition between stable and unstable regimes as the angle of incidence is varied has also stimulated new work by other groups in the field. (ii) Growth of Ge quantum dots on Si(100) and (111). We discovered the formation of quantum wires on 4° misoriented Si(111) using real-time GISAXS during the deposition of Ge.more » The results represent the first time-resolved GISAXS study of Ge quantum dot formation. (iii) Sputter deposition of amorphous thin films and multilayers composed of WSi2 and Si. Our in-situ GISAXS experiments reveal fundamental roughening and smoothing phenomena on surfaces during film deposition. The main results of this work is that the WSi2 layers actually become smoother during deposition due to the smoothening effect of energetic particles in the sputter deposition process.« less