Abstract
As a step toward the complete establishment of the silicon wafer edge treatment technique by ultrasonically assisted polishing (UAP) proposed in previous works (Yang et al., 2008; Kobayashi, 2008), the present work deals with the effects of several dominant process parameters (i.e., wafer rotational speed and slurry supply rate) on the wafer surface topography, the surface roughness, and the material removal in details. The obtained experimental results showed that:
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