Abstract

ABSTRACTBasic consideration of parameters including electron de Broglie wavelength, resonant tunneling time (τr) and inelastic scattering tunneling (τi) were studied to identify the intrinsic tunneling properties of amorphous double—barrier (DB) structure. The order of magnitude of τr/τi. of amorphous DB structure is about 5 to 12 which is far beyond that of crystalline case which is 1 to 2. The transmissivity versus applied voltage or versus electron energy were calculated to identify the influence of barrier height, barrier thickness and electron effective mass. The influence of carrier distribution will also be discussed.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.