Abstract
Silicon substrates with stripe-patterned surface-near electrostatic forces (SNEF) were prepared by local implantation of boron ions into n-type silicon wafers and of phosphorus ions into p-type silicon wafers in a stripe pattern of 12 μm periodicity. The dependence of SNEF on the concentration of implanted ions, post-annealing conditions, and generation of charge carriers under illumination was investigated by measuring the 1st and 2nd harmonics of the SNEF in the dark and under illumination using Kelvin probe force microscopy. The self-organized immobilization of biomolecules on silicon regions with positive charges occupying the interface states between the silicon and the native SiO2 has been demonstrated for the negatively charged single stranded deoxyribonucleic acid (DNA) and bovine serum albumin (BSA) proteins.
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