Functionalization of morphology in optimization of dielectric, electrical/impedance modulus, and relaxation mechanisms of Co-Ni doped M-type Sr nanoferrites

Abstract

In this article, novel M-type hexaferrites SrCoxNixFe12−2xO19 were synthesized using the sol–gel method. The phase structure was characterized by x-ray diffraction, grain morphology was investigated from scanned electron micrographs, and dielectric/electric/impedance characteristics were analyzed in the frequency range of 100 Hz to 2 MHz. X-ray diffraction (XRD) revealed the formation of hexaferrites without any secondary phase. The grain size and distribution were significantly affected by Co-Ni dopants and there was an observation of cluster of grains, grain agglomerates, and improved inter-grain connectivity. The substitution of Co-Ni caused a reduction in crystallite size from 41.47 to 23.14 nm and the dielectric constant/loss tangent varied non-monotonically. The electric modulus indicated a non-Debye type relaxation and the charge transport mechanism exhibited conductivity relaxation to be more dominant than dielectric relaxation. The prepared ferrites show a large dielectric constant and hence are suitable for use in transformer core and storage media. The correlation of simulated grain/grain boundary parameters with morphology, dielectric parameter, and electric modulus has been presented.