Abstract
Nanolaminates composed of TiO2 and Al4O3(PO4)2 (AlPO) thin films have been fabricated from aqueous solution precursors. By adjusting precursor concentrations individual layers can be controlled to a thickness near 1 nm. Characterization by X-ray reflectivity and transmission electron microscopy (TEM) reveals near-atomically smooth interfaces and a high degree of regularity in the film stacks. X-ray diffraction is utilized to investigate the crystallization behavior of TiO2 layers under one-dimensional confinement of the glassy AlPO layers. TiO2–AlPO nanolaminates incorporated into capacitor structures exhibit low leakage current densities (<10 nA/cm2 at 1 MV/cm) and high breakdown fields up to 5.4 MV/cm with annealing temperatures as low as 350 °C. Tailorable dielectric constants have also been demonstrated by varying the relative thickness of the TiO2 and AlPO films. As gate dielectrics in thin-film transistors with solution-processed amorphous indium gallium zinc oxide channels, the nanolaminates exhibit small gate leakage, enabling ideal transistor performance with incremental mobilities near 3 cm2/V·s.
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