Abstract
Novel spinel heteroepitaxial structures composed of ferrimagnetic spinel CoFe2O4 (CFO) and ultrathin γ-Al2O3 buffer layers are integrated on Si(111). Flat (111)-oriented epitaxial CFO films with only two in-plane domains induced by γ-Al2O3 are ferromagnetic at room temperature with high saturation magnetization. These results open the prospect of using functional spinel layers on silicon for monolithic devices.
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