Abstract

In this work, we have synthesized donor‐acceptor (Al‐Cu) codoped ZnO nanoparticles with a doping concentration of 0%, 0.25%, 0.5%, and 0.75% by coprecipitation method. The synthesized samples were then annealed at 350°C and 600°C. All the samples showed wurtzite structure of ZnO with no secondary phase. The increase in doping concentration led to deterioration of crystalline quality, while improved crystallinity was observed at higher annealing temperature. The morphological study of these samples showed good grain‐to‐grain contact with less isolated pores. These samples were further characterized by impedance spectroscopy for analyzing dielectric properties. The values of the real part of dielectric constant and tangent loss showed decreasing trend with frequency. The appearance of semicircular arcs in the impedance complex plane plots indicates contribution of grains and grain boundaries and presence of different relaxation processes. 0.5% Al and Cu codoped ZnO showed the best dielectric response with a high value of dielectric constant and low tangent loss.

Highlights

  • Energy is the crucial element for worldwide development

  • We found that 0.5% analysis of donor (Al) and Cu codoped ZnO showed relatively better results with high dielectric constant and low tangent loss

  • X-ray diffraction (XRD) results showed that all the samples have a wurtzite structure with no secondary phase

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Summary

Introduction

Energy is the crucial element for worldwide development. Oil price fluctuation, depletion of fossil fuel resources, and practical challenges in controlling environmental pollution have made renewable energy the most promising option. Frequency- and temperature-independent CP and low dielectric loss were achieved in In and Nb codoped TiO2 ceramic system. Donor (Nb) and acceptor (In) substitution in TiO2 created local delocalized electron, defect dipole-type clusters [4]. These electron-pinned defect dipoles were argued to be the reason for observed CP. Following this donor-acceptor substitution approach, there have been many reports in which CP with low dielectric loss has been achieved [9,10,11]. Efforts are still being made to fabricate CP materials with low dielectric losses, as no practical solution has yet been found for temperature and frequency stable

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