Abstract
The highly transparent SnO 2 thin films were deposited through solution-based inkjet printing using a simple precursor solution. We were able to fabricate porous tin oxide thin film that has a thin nanoporous layer on top and a thicker meso- and macroporous layer beneath the top layer. The thin-film transmittance is over 98% in the visible wavelength range. A mechanism based on gas evolution was proposed to explain the formation of porous structure. A depletion-mode thin-film transistor using the porous tin oxide channel layer was fabricated with a field-effect mobility of 3.62 cm 2 /V s.
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