Abstract
Pressure- and temperature-dependent Raman scattering in GeSe, SnSe, and GeTe for pressures beyond 50GPa and for temperatures ranging from 78 to 800K allow us to identify structural and electronic phase transitions, similarities between GeSe and SnSe, and differences with GeTe. Calculations help to deduce the propensity of GeTe for defect formation and the doping that results from it, which gives rise to strong Raman damping beyond anomalous anharmonicity. These properties are related to the underlying chemical bonding and consistent with a recent classification of bonding in several chalcogenide materials that puts GeTe in a separate class of "incipient" metals.
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