Abstract
Constructing heterojunctions in semiconductor-based sensors is a vital method of modulating electronic structures and designing high-performance sensors for toxic gas detection. In this study, F-doped SnSx (F-SnSx) decorated ZnOHF composites were acquired via a two-step solvothermal method. The experimental results confirmed the establishment of heterojunctions between ZnOHF and F-SnSx. The optimized F-SnSx decorated ZnOHF snowflake-like nanoflowers-based NO2 sensors exhibited incomparable selectivity along with supreme sensitivity (S = 137–10 ppm NO2 at 200 ℃), rapid responding/recovering speed (34 s/6 s) and low detection limit (50 ppb). NO2 sensing mechanism and the influence of humidity interference on NO2 sensing performances were fully discussed. This work not only evidences the great potential of F-SnSx/ZnOHF snowflake-like nanoflowers for NO2 recognitions but also paves a feasible routine for advancing NO2 sensing performances by electronic structure regulations.
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