Abstract
Abstract A new functional AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) with a pseudomorphic InGaAs/GaAs quantum-well (QW) base structure is presented. Due to the insertion of an InGaAs QW between the emitter–base (E–B) junction, the valence band discontinuity can be enhanced. The excellent transistor characteristics including a high current gain of 280 and a low offset voltage of 100 mV are obtained. In addition, an interesting multiple S-shaped negative differential resistance (NDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect.
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