Fully solution-processed organic thin-film transistors by consecutive roll-to-roll gravure printing

Abstract

A high-performance/flexible organic thin-film transistor (OTFT) is fabricated by using all-step solution processes, which are composed of roll-to-roll gravure, plate-to-roll gravure and inkjet printing with the least process number of 5. Roll-to-roll gravure printing is used to pattern source/drain electrodes on plastic substrate while semiconductor and dielectric layers are printed by consecutive plate-to-roll gravure printing. Finally, inkjet printing of Ag organometallic ink is used to pattern the gate electrode. The fabricated OTFT exhibits excellent electrical performance, field-effect mobility over 0.2 cm2/Vs, which is one of the best compared to the previous works. The deposition of a self-assembled monolayer on the source-drain electrodes results in a higher work function which is suitable for a p-type polymer semiconductor. Moreover, the formation of dense gate electrode line on hydrophobic dielectric is achieved by selecting suitable Ag ink.