Abstract
A fully self-consistent method for solution of the Schrodinger---Poisson equation is presented for III-nitride quantum cascade structures (QCSs). The impact of internal polarization fields on the band structure is incorporated through the coupled Schrodinger---Poisson equation with proper boundary conditions. The method is validated by comparison of the results with reported values for various QCSs. The absorption coefficient for a QCS is obtained and detailed theoretical analysis of the absorption spectrum performed. The influences of temperature, electric field, and active-layer doping on the absorption coefficient were examined. Devices with III-nitride heterostructures show some superior characteristics due to the presence of strong internal polarization fields. It is observed that system doping and temperature do not change the peak absorption wavelength significantly, which is very helpful for operation of high-performance and high-temperature devices. The operating wavelength of the device can be tuned slightly by variation of the external bias voltage.
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