Abstract
A novel protective monolayer film on an n-InP semiconductor is obtained using a controlled photoelectrochemical process performed in liquid ammonia. Using a submillicoulombs per square centimeter spent charge and using a low current density (<10 μA/cm2) in an innovative photoassisted galvanostatic mode, a novel passivation process with ultrathin film growth was successfully employed. The nature of the resulting monolayer which has a polyphosphazene-like structure is studied by X-phoelectron spectroscopy. The proof and reproducibility of the thickness and chemical composition are clearly evidenced by XPS analyses. The perfect coverage of the InP matrix by this thin film is revealed by electrochemical experiments and XPS data. The presence of amino groups in the film offers a unique opportunity for further functionalization, as exemplified by the first chemically controlled coordination of Pt(II) centers onto the protective layer. The stability of the covered InP substrate as well as of the passivated film ...
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