Abstract
HighlightsFully inkjet-printed transparent high-performance thin-film transistors (TFTs) with ultrathin indium tin oxide (ITO) as semiconducting channels were achieved.The energy band alignment at ITO/Al2O3 channel/dielectric interface was investigated by in-depth spectroscopy analysis.Fully printed n-type metal–oxide–semiconductor inverters based on ITO TFTs exhibited extremely high gain of 181 at a low-supply voltage of 3 V, promising for applications in advanced electronic devices and circuits.
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