Abstract
This paper describes a novel fully planar AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology using selective chemical beam epitaxy (CBE). Planarization is achieved by a selective regrowth of the base and collector contact layers. This process allows the simultaneous metallization of the emitter, base and collector on top of the device. For the devices with an emitter-base junction area of 2/spl times/6 /spl mu/m/sup 2/ and a base-collector junction area of 14/spl times/6 /spl mu/m/sup 2/, a current gain cut off frequency of 50 GHz and a maximum oscillation frequency of 30 GHz are achieved. The common emitter current gain h/sub FE/ is 25 for a collector current density J/sub c/ of 2/spl times/10/sup 4/ A/cm/sup 2/. >
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