Fully integrated 23dBm transmit chain with on-chip power amplifier and balun for 802.11a application in standard 45nm CMOS process

Abstract

A fully integrated transmit chain for 802.11a band with on-chip power amplifier and on-chip balun matching network in 45 nm standard digital CMOS process demonstrates saturated power of +23 dBm. The average efficiency is +5% and peak efficiency is +15%. A standalone class AB CMOS power amplifier with on-chip balun matching network was also produced and detailed characterization data is presented. Using digital predistortion, an EVM of -28 dB is achieved at 19 dBm for 5 GHz band and 2.5 GHz band for standalone power amplifier.